O le sili ona lelei o le eletise a le Shenzhen LED Opto-electronic Co., o loʻo ofoina atu e le Ltd ituaiga o TAITAIINA ma eseʻesega o galuʻu mai 365nm i le 1550nm Mo Taitaiina infrared, o le wavelength mafai ona: 660nm 680nm 690nm 700nm 710nm 720nm 730nm 740nm 750nm 760nm 770nm 780nm 800nm 810nm 820nm 830nm 850nm 860nm 870nm 880nm 890nm 900nm 905nm 910nm 920nm 940nm 950nm 970nm 980nm 1000nm 1020nm 1050nm 1200nm 1300nm 1500nm 1550nm. Mo UV LED, o le wavelength mafai ona 365nm 370nm 380nm 390nm 400nm 410nm 420nm 430nm ma isi isi wavelength o loʻo avanoa foi na faia e AlGaAs / AlGaAs mea infrared chips. O nei TAITAIINA i ai le mautu gaioiga ma umi soifuaga.3528 SMD LED 750nmis a maualuga lelei infrared emitting diode i GaAlAs luga o GaAs tekonolosi, fausiaina i le manino, paʻepaʻe papaʻe tint palasitika afifi. Faʻatusatusa ma le masani GaAs i GaAs tekonolosi nei emitters ausia sili atu nai lo 100% radi? Loi faʻaleleia mana i le tutusa wavelength. O voluma i luma i lalo maualalo ma i le maualuga paʻu taimi nei pe tusa e tutusa ma le maualalo taua o le tulaga tekonolosi. O le mea lea o nei emitters e talafeagai lelei e pei o maualuga gaioiga sui o tulaga masani emitters. Malamalama mūmū infrared Taitaiina wavelength faapalepale o faatasi ma ± 10nm. Lua IR

- tulaga tapulaa -

O nei SMD LED mataupu o loʻo avanoa foi mo IR LED, UV LED, Blue SMD LED, Red SMD LED, Amber LED ect.

- Emitting Lanu -

- Parakalafa eletise -

Aofaʻiga Maualuga Maualuga I Ta = 25 ℃

Parameter	Symbol	Rating
Power Dissipation	Pd	270mW
Pulse Forward Current	IFP	350mA
Forward Current	IF	100mA
Reverse Voltage	VR	5V
Junction Temperature	Tj	115°C
Operating Tempertature	Topr	-40 - +80°C
Storage Tempertature	Tstg	-40 - +100°C
Soldering Temperature	Tsol	260°C
Electro-Static-Discharge(HBM)	ESD	2000v
Warranty	Time	5Years
Antistatic bag	Piece	2000Back
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C

Uiga masani ma eletise ( T c = 25 ℃ )

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Forward Voltage	VF	2.2		2.7	V	IF=100mA
Pulse Forward Voltage	VF		3.6		V	IFP=350mA
Radiant Intensity	IE	50		70	mw/sr	IF=100mA
Peak Wavelength	λP	750	755	760	nm	IF=100mA
Total Radiated Power	PO		5.6		mw	IF=100mA
Half Width	Dl		50		nm	IF=100mA
Viewing Half Angle	2q1/2		±60		deg	IF=100mA
Reverse Current	IR			5	uA	VR=5V
Rise Time	Tr		25		ns	IF=100mA
Fall Time	Tf		13		ns	IF=100mA
*Luminous Intensity is measured by ZWL600.
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

- 750nm TAITAIINA -

- Soʻotaga uaea Auro -

* Ina ia mafai ona tausia uma o Umi umi uumi olaga, BestLED fale gaosi faʻaaoga maualuga mama auro uaea mo totonu liʻo fesoʻotaʻiga

- Teuina -

* Matou te afifiina i le lagona gaogao teuina pe a faʻapipiʻi e pei o se taʻavale

-Apalai-

- Fesoʻotaʻiga IR IR -

- 750nm LED Faʻaaogaina -